Inelastic electron tunneling spectroscopy in molecular junctions showing quantum interference

Inelastic electron tunneling spectroscopy in molecular junctions: peaks and dips.

We study inelastic electron tunneling through a molecular junction using the nonequilibrium Green's function formalism. The effect of the mutual influence between the phonon and the electron subsystems on the electron tunneling process is considered within a general self-consistent scheme. Results of this calculation are compared to those obtained from the simpler Born approximation and the sim...

Inelastic Electron Tunneling Spectroscopy

Inelastic electron tunneling spectroscopy for topological insulators.

Inelastic electron tunneling spectroscopy is a powerful spectroscopy that allows one to investigate the nature of local excitations and energy transfer in the system of interest. We study inelastic electron tunneling spectroscopy for topological insulators and investigate the role of inelastic scattering on the Dirac node states on the surface of topological insulators. Local inelastic scatteri...

Vibronic coupling in semifluorinated alkanethiol junctions: implications for selection rules in inelastic electron tunneling spectroscopy.

Determining the selection rules for the interaction of tunneling charge carriers with molecular vibrational modes is important for a complete understanding of charge transport in molecular electronic junctions. Here, we report the low-temperature charge transport characteristics for junctions formed from hexadecanethiol molecules having varying degrees of fluorination. Our results demonstrate t...

Probing electron-phonon excitations in molecular junctions by quantum interference

Electron-phonon coupling is a fundamental inelastic interaction in condensed matter and in molecules. Here we probe phonon excitations using quantum interference in electron transport occurring in short chains of anthraquinone based molecular junctions. By studying the dependence of molecular junction's conductance as a function of bias voltage and temperature, we show that inelastic scattering...